bat 66-05 oct-07-1999 1 silicon schottky diode ? low-power schottky rectifier diode ? for low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose vps05163 1 2 3 4 eha00005 1 2, 4 3 type marking pin configuration package bat 66-05 bat 66-05 1 = a1 2=c1/c2 3 = a2 4=c1/c2 sot-223 maximum ratings parameter symbol value unit diode reverse voltage v r 40 v forward current i f 2 a average forward current (50/60hz, sinus) i fav 1 surge forward current, t 10ms i fsm 10 total power dissipation , t s 126 c p tot 1.2 w junction temperature t j 150 c storage temperature t st g -55 ... 150 maximum ratings junction - ambient 1) r thja 160 k/w junction - soldering point r thjs 20 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bat 66-05 oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 25 v i r - - 10 a reverse current v r = 25 v, t a = 85 c - i r - 1 ma forward voltage i f = 1 ma i f = 100 ma i f = 1 a v f - - - 0.28 0.35 0.47 0.35 - 0.6 v ac characteristics diode capacitance v r = 10 v, f = 1 mhz c t - 30 40 pf forward current i f = f ( v f ) t a = parameter 0 0.5 0.75 bat 66-05 ehb00062 v ma 0.25 a t = 25 ?c 85 ?c 10 -1 10 0 10 1 10 2 3 10 r v f reverse current i r = f ( v r ) t a = parameter 0102030 bat 66-05 ehb00063 v a a t = 125 ? c 85 ? c 25 ? c 10 -1 10 0 10 1 10 2 3 10 10 4 r r v
bat 66-05 oct-07-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehb00155 bat 66-05 f a t ; t s 50 100 ? c 150 t a s t 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 a 2.2
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